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Program of Solid-state Electronic Devices and Materials

  In this sector, our researches encompass various kinds of topics, including the nanoscale si-based devices, device measurement and simulation, and emerging memory devices. So generally, our researchers actively work on developing nanoscale si-based devices, the electric property of nanoscale devices measurement, physical simulation, and developing emerging memory devices.
  Our areas of expertise focus on utilizing the FinFET (Fin Field-Effect Transistor) and tunnel materials of the epitaxial growth of high carrier mobility on the silicon chip (germanium and group III-V materials). Hence, we aim at developing new FETs at the size below 10 nanometers, and of high performance. Besides, finding ways to make good use of the quantum tunneling effect’s tunnel FET and the negative capacitance FET of ferroelectric materials and negative capacitance effect are also critical goals in our future study.
  Nanoscale physical phenomena, including low dimensional transmission, stress effect, quantum confinement effect, heterojunction, and noise disturbance, are all largely distinct from the past semiconductor devices. Therefore, forging a complete physical model through the electric property measurement and theory calculations is crucial to improve the functions of our devices. Hopefully, these efforts may make great contribution to the reliability of our devices, compact model simplification, and circuit common optimization.
  High density storage-class memory and low-cost embedded non-volatile memory are the major two trends of future memory development. In the future, these two types of memory would be playing essential roles in the current high-speed and low-power consumption information system. However, our existing technology of memory devices is unable to meet our present needs. Therefore, emerging memory technologies like the three-dimensional and high-density NAND flash memory, ferroelectric memory, magnetic memory, phase-change memory, and resistive memory are our crucial research issues.