• Name : Edward-Yi Chang
  • Job Title : Professor
  • Email : edc@mail.nctu.edu.tw
  • Office Tel No. : 03-5712121 ext. 31536/31502
  • Research Expertise :
    Process and packaging technologies of III-V high-speed and high-frequency electronic devices GaN epitaxy and device technologies III-V(GaN, GaAs, InAs)/Ge/Si heterogeneous materials Integration
  • Biography
    • Education
      • Ph.D., Materials Science and Engineering, University of Minnesota, USA
      • B.S., Dept. of Materials Science and Engineering, National Tsing-Hua University, Taiwan
    • Current and Past Work / Service Records
      • Dean, International College of Semiconductor Technology, NCTU(2014.08~)
      • Director, NCTU-TSMC Research Center (2013.05~)
      • Vice President for Research and Development, NCTU (2011.02~)
      • Director, Office of Diamond Program, NCTU (2011.02~)
      • Joint Professor, Dept. of Electronics Engineering, NCTU (2008.02~)
      • Chairperson, Dept. of Materials Science and Engineering, NCTU (2004.02~2008.02)
      • Dean, Office of International Affairs, NCTU (2002.06 ~ 2004.01)
      • Professor, Dept. of Materials Science and Engineering, NCTU (1999.01~)
      • General Manager, Hexawave Inc., Taiwan (1997.12~ 1999.01)
      • Senior MTS, Microelectronics Division, Comsat Labs, USA (1988.05~1990.01)
      • Senior MTS, GaAs Component Division, Unisys Corp, USA (1985.12-1988.05) 

  • Awards and Recognitions
    • ​IEEE Fellow
    • Taiwanese Materials Society Fellow
    • National Award for Academic Contribution to Industry and Industry from Ministry of Economic Affairs
    • Economy Contribution Award from Ministry of Economic Affairs
    • Three times Outstanding Research Award from MOST
    • Distinguished Contribution for Technical Transfer to Industry form MOST
    • Distinguished Electrical Engineering Professor Award from Chinese Institute

  • Publications (Selected Publications)
1.   Y. L. Lai, E. Y. Chang, C. Y. Chang, T. K. Chen, T. H. Liu, S. P. Wang, T. H. Chen, C. T. Lee, “5mm high-power-density dual-delta-doped power HEMT’s for 3 V L-band applications,” IEEE Electron Device Lett., vol.17, no. 5, pp. 229-231, May 1996.
2.   C. Y. Chen, E. Y. Chang, L. Chang, and S. H. Chen, “Backside copper metallization of GaAs MESFET’s using TaN as the diffusion barrier”, IEEE Trans. Electron Devices, vol.48, no.6, pp.1033-1036,June 2001.
3.   Y. C. Lin, H.Yamaguchi, E. Y. Chang, Y. C. Hsieh, M. Ueki, Y. Hirayama, C. Y. Chang, “Growth of very high mobility AlGaSb/InAs High-Electron-Mobility transistor structure on Si substrate for high-speed electronic applications”, Appl. Phys. Lett., vol. 90, issue 2, pp. 0235091-1–0235091-3, Nov. 2007.
4.   C. Y. Chang, H. T. Hsu, E. Y. Chang, C. I. Kuo, M. Radosavljevic, Y. Miyamoto, and G. W. Huang, “Investigation of Impact Ionization in InAs-Channel HEMT for Speed and Low Power Applications” IEEE Electron Device Lett., vol. 28, no. 10, pp.856 - 858,Oct. 2007.
5.   C. I Kuo, H. T. Hsu, E. Y. Chang, C. Y. Chang, Y. Miyamoto, S. Datta, M.Radosavljevic, G. W. Huang, and C. T. Lee, “RF and Logic Performance Improvement of In0.7Ga0.3As /InAs/In0.7Ga0.3As Composite Channel HEMT Using Gate Sinking Technology, ”IEEE Electron Device Lett., vol. 29, no. 4, pp. 290-293, April 2008.
6.   E. Y. Chang, C. I. Kuo, H. T. Hsu, C. Y. Chiang, and Y. Miyamoto, “InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications,” Appl. Phys. Express, vol.6,no.3, pp.03400-1–03400-3, Feb. 2013.
7.   H. D. Trinh, Y. C. Lin, E. Y. Chang, C. T. Lee, S.Y. Wang, H. Q. Nguyen, Y. S. Chiu, Q. H. Luc, H.C. Chang, C. H. Lin, S. Jang, and C. H. Diaz, “Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing Temperature,” IEEE Trans. Electron Devices, vol. 60, no. 5,pp. 1555 – 1559,May 2013.
8.   Y. C. Lin, H. D. Trinh, T. W. Chuang, H. Iwai, K. Kakushima, P. Ahmet, C. H. Lin, C. H. Diaz, H. C. Chang, S. M. Jang, and E. Y. Chang. ” Electrical Characterization and Materials Stability Analysis of La2O3/HfO2 Composite Oxides on n-In0.53Ga0.47As MOS Capacitors with Different Annealing”, IEEE Electron Device Lett., vol. 34, no. 10, pp. 1229 – 1231, Oct. 2013.
9.   T. E. Hsieh, E. Y. Chang, Y. Z. Song, Y. C. Lin, H.C. Wang, S. C. Liu, S. Salahuddin, and C. C. Hu ” Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer” IEEE Electron Device Lett.,vol. 35, no 7,pp.732 – 734,July2014.
10.  S. C. Liu, B. Y. Chen, Y. C. Lin, T. E. Hsieh, H. C. Wang, and E. Y. Chang, “GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications“ IEEE Electron Device Lett., vol. 35, no. 10, pp.1001 – 1003, Oct. 2014.