Orbit

年度 2007
全部作者 Y. C. Lin, H.Yamaguchi, E. Y. Chang, Y. C. Hsieh, M. Ueki, Y. Hirayama, C. Y. Chang
論文名稱 Growth of very high mobility AlGaSb/InAs High-Electron-Mobility transistor structure on Si substrate for high-speed electronic applications
期刊名稱 Appl. Phys. Lett., vol. 90, issue 2, pp. 0235091-1–0235091-3, Nov. 2007
語言 中文