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Tuo-Hung Hou was born in Chia-Yi, Taiwan, in 1975. He received his B.S. and M.S. in electronics engineering from National Chiao Tung University, Taiwan in 1996 and 1998, respectively, and his Ph.D. degree in electrical and computer engineering from Cornell University in 2008. From 1998 to 2000, he served as a Second Lieutenant in the Army, Taiwan, R.O.C. In 2000, he joined Taiwan Semiconductor Manufacturing Company (TSMC). From 2001 to 2003, he was also a TSMC assignee at International SEMATECH, Austin, TX. During his tenure with TSMC, he has contributed to several key front-end processes such as spike annealing, high-k / metal gate stack through atomic layer chemical deposition, and reliability improvement of ultra-thin gate oxide. Since 2008, he joined the Department of Electronics Engineering, National Chiao Tung University (NCTU), where he is currently a Professor. He is also the Directior of EECS International Graduate Program (EECSIGP), NCTU since 2015. His research interests include the development of terabit nonvolatile resistive-switching memory, electronic synaptic device and neuromorphic computing systems, low-temperature all-oxide integrated circuits for flexible electronics, and heterogeneous integration of silicon electronics and low-dimensional nanomaterials.
Tuo-Hung Hou has authored or co-authored more than 150 technical papers and held 12 U.S. patents. He was also a recipient of IEEE Electron Device Society PhD student fellowship in 2007, EDMA Outstanding Youth Award in 2012, and Ta-You Wu Memorial Award in 2013.
|2011||T. H. Hou, Metal-oxide resistive-switching RAM technology, McGraw-Hill 2011 Yearbook of Science and Technology, 9780071763714|
|美國||康乃爾大學||電機工程||博士||2004.09 ~ 2008.06|
|台灣||國立交通大學||電子工程||碩士||1996.09 ~ 1998.06|
|台灣||國立交通大學||電子工程||學士||1992.09 ~ 1996.06|